The plasma parameters in ICP-CVD system with internal low inductance antennas（LIA） were diagnosed by Langmuir probe.The ions density（Ni） reached 1011-1012 cm-3,and the electron temperature（Te） was below ca.2 eV,...The plasma parameters in ICP-CVD system with internal low inductance antennas（LIA） were diagnosed by Langmuir probe.The ions density（Ni） reached 1011-1012 cm-3,and the electron temperature（Te） was below ca.2 eV,which was slightly decreased with applied power.A p-type hydrogenated microcrystalline silicon（μc-Si：H） film was prepared on glass substrate.After optimization of the processing parameters in flow ratio of SiH4：B2H6：H2,a high quality μc-Si：H film with deposition rate above 1.0 nm/s was achieved in this work.展开更多
基金supported by National Natural Science Foundation of China(Nos.11175024,11375031),2011BAD24B01,KM 201110015008,KM 201010015005,BIGC Key Project(No.23190113051)and PHR20110516,PHR201107145
文摘The plasma parameters in ICP-CVD system with internal low inductance antennas（LIA） were diagnosed by Langmuir probe.The ions density（Ni） reached 1011-1012 cm-3,and the electron temperature（Te） was below ca.2 eV,which was slightly decreased with applied power.A p-type hydrogenated microcrystalline silicon（μc-Si：H） film was prepared on glass substrate.After optimization of the processing parameters in flow ratio of SiH4：B2H6：H2,a high quality μc-Si：H film with deposition rate above 1.0 nm/s was achieved in this work.
