We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is cou- pled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by...We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is cou- pled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposi- tion and then transferred onto an SiO2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz 1/2. Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.展开更多
Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance expe...Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu^3＋ and Pr^3＋ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu^3＋ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu^3＋ ions occupied Bi^3＋ sites, and there could be an energy transfer from Bi^3＋ ions to RE^3＋ ions.展开更多
Plasmon modes in graphene can be tuned into resonance with an incident terahertz electromagnetic wave in the range of 1–4 THz by setting a proper gate voltage. By using the finite-difference-time-domain（FDTD） metho...Plasmon modes in graphene can be tuned into resonance with an incident terahertz electromagnetic wave in the range of 1–4 THz by setting a proper gate voltage. By using the finite-difference-time-domain（FDTD） method, we simulate a graphene plasmon device comprising a single-layer graphene, a metallic grating, and a terahertz cavity. The simulations suggest that the terahertz electric field can be enhanced by several times due to the grating–cavity configuration. Due to this near-field enhancement, the maximal absorption of the incident terahertz wave reaches up to about 45%.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61271157,61401456,and 11403084)Jiangsu Provincial Planned Projects for Postdoctoral Research Funds(Grant No.1301054B)+4 种基金the Fund from Suzhou Industry Technology Bureau(Grant No.ZXG2012024)China Postdoctoral Science Foundation(Grant No.2014M551678)the Graduate Student Innovation Program for Universities of Jiangsu Province(Grant No.CXLX12-0724)the Fundamental Research Funds for the Central Universities(Grant No.JUDCF 12032)the Fund from National University of Defense Technology(Grant No.JC13-02-14)
文摘We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is cou- pled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposi- tion and then transferred onto an SiO2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz 1/2. Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.
文摘Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu^3＋ and Pr^3＋ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu^3＋ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu^3＋ ions occupied Bi^3＋ sites, and there could be an energy transfer from Bi^3＋ ions to RE^3＋ ions.
基金Project supported by the National Natural Science Foundation of China(Grant No.61271157)Jiangsu Planned Projects for Postdoctoral Research Funds,China(Grant No.1301054B)Suzhou Industry and Technology Bureau,China(Grant No.ZXG2012024)
文摘Plasmon modes in graphene can be tuned into resonance with an incident terahertz electromagnetic wave in the range of 1–4 THz by setting a proper gate voltage. By using the finite-difference-time-domain（FDTD） method, we simulate a graphene plasmon device comprising a single-layer graphene, a metallic grating, and a terahertz cavity. The simulations suggest that the terahertz electric field can be enhanced by several times due to the grating–cavity configuration. Due to this near-field enhancement, the maximal absorption of the incident terahertz wave reaches up to about 45%.
