紫外LED的发光功率和效率还远不能令人们满意,波长短于300 nm的深紫外LED的发光效率普遍较低。厘清高Al组分Al Ga N多量子阱结构的发光机制将有利于探索改善深紫外LED的发光效率的新途径、新方法。为此,本文通过金属有机气相外延技术外...紫外LED的发光功率和效率还远不能令人们满意,波长短于300 nm的深紫外LED的发光效率普遍较低。厘清高Al组分Al Ga N多量子阱结构的发光机制将有利于探索改善深紫外LED的发光效率的新途径、新方法。为此,本文通过金属有机气相外延技术外延生长了表面平整、界面清晰可辨且陡峭的高Al组分AlGa N多量子阱结构材料,并对其进行变温光致发光谱测试,结合数值计算,深入探讨了Al Ga N量子阱的发光机制。研究表明,量子阱中具有很强的局域化效应,其发光和局域激子的跳跃息息相关,而发光的猝灭则与局域激子的解局域以及位错引起的非辐射复合有关。展开更多
We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities i...We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.展开更多
By using the first-principles calculations, structural and electronic properties of Au and Ti adsorbed WS2 monolayers are studied systematically. For Au-adsorbed WS2, metallic interface states are induced in the middl...By using the first-principles calculations, structural and electronic properties of Au and Ti adsorbed WS2 monolayers are studied systematically. For Au-adsorbed WS2, metallic interface states are induced in the middle of the band gap across the Fermi level. These interface states origin mainly from the Au-6s states. As to the Ti adsorbed WS2, some delocalized interface states appear and follow the bottom of conduction band. The Fermi level arises into the conduction band and leads to the n-type conducting behavior. The n-type interface states are found mainly come from the Ti-3d and W-5d states due to the strong Ti–S hybridization. The related partial charge densities between Ti and S atoms are much higher and increased by an order of magnitude as compared with that of Au-adsorbed WS2. Therefore, the electron transport across the Ti-adsorbed WS2 system is mainly by the resonant transport, which would further enhances the electronic transparency when monolayer WS2 contacts with metal Ti. These investigations are of significant importance in understanding the electronic properties of metal atom adsorption on monolayer WS2 and offer valuable references for the design and fabrication of 2D nanodevices.展开更多
文摘紫外LED的发光功率和效率还远不能令人们满意,波长短于300 nm的深紫外LED的发光效率普遍较低。厘清高Al组分Al Ga N多量子阱结构的发光机制将有利于探索改善深紫外LED的发光效率的新途径、新方法。为此,本文通过金属有机气相外延技术外延生长了表面平整、界面清晰可辨且陡峭的高Al组分AlGa N多量子阱结构材料,并对其进行变温光致发光谱测试,结合数值计算,深入探讨了Al Ga N量子阱的发光机制。研究表明,量子阱中具有很强的局域化效应,其发光和局域激子的跳跃息息相关,而发光的猝灭则与局域激子的解局域以及位错引起的非辐射复合有关。
文摘基于光电容积脉搏波描记法(Photo Plethysmo Graphy,PPG)的柔性传感器可进行心率(Heart Rate,HR)和血压(Blood Pressure,BP)检测,但是对其检测结果的标定报道甚少.据此,本文提出一种基于模拟血液循环的反射式PPG心率检测和血压标定系统.以蠕动泵来产生脉动流,通过调节其转速的大小来控制模拟血液输送的频率和压力,从而引起弹性乳胶管内模拟血液体积的变化,而改变反射光的信号周期与强度,贴近于人体脉搏测量过程的实际场景.该系统心率检测误差均值为0.27778,95%一致性界限为(-2.59562,3.15117),所测收缩压(Systolic Blood Pressure,SBP)和舒张压(Diastolic Blood Pressure,DBP)的拟合优度分别为0.97185和0.98111.经标定后的柔性PPG传感器对4名志愿者检测的SBP和DBP的平均偏差(Mean Deviation,MD)±标准差(Standard Deviation,SD)均值分别为(1.21±2.16)mmHg和(0.76±2.02)mmHg,均符合且远小于美国医疗仪器促进协会(Association for the Advancement of Medical Instrumentation,AAMI)所制定的衡量血压计精度的标准指标(5±8)mmHg.结果表明,该系统能够准确高效地标定柔性PPG传感器,为实现便携式可穿戴设备的精准血压检测提供标定基础.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10774001, 60736033, 60776041 and 60876041, and National Basic Research Program of China under Grant Nos 2006CB604908 and 2006CB921607, and the National Key Basic R＆D Plan of China under Grant Nos TG2007CB307004.
文摘We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.91321102,11304257,and 61227009)the Natural Science Foundation of Fujian Province,China(Grant Nos.2011J05006,2009J05149,and 2014J01026)+2 种基金the Foundation from Department of Education of Fujian Province,China(Grant No.JA09146)Huang Hui Zhen Foundation of Jimei University,China(Grant No.ZC2010014)the Scientific Research Foundation of Jimei University,China(Grant Nos.ZQ2011008 and ZQ2009004)
文摘By using the first-principles calculations, structural and electronic properties of Au and Ti adsorbed WS2 monolayers are studied systematically. For Au-adsorbed WS2, metallic interface states are induced in the middle of the band gap across the Fermi level. These interface states origin mainly from the Au-6s states. As to the Ti adsorbed WS2, some delocalized interface states appear and follow the bottom of conduction band. The Fermi level arises into the conduction band and leads to the n-type conducting behavior. The n-type interface states are found mainly come from the Ti-3d and W-5d states due to the strong Ti–S hybridization. The related partial charge densities between Ti and S atoms are much higher and increased by an order of magnitude as compared with that of Au-adsorbed WS2. Therefore, the electron transport across the Ti-adsorbed WS2 system is mainly by the resonant transport, which would further enhances the electronic transparency when monolayer WS2 contacts with metal Ti. These investigations are of significant importance in understanding the electronic properties of metal atom adsorption on monolayer WS2 and offer valuable references for the design and fabrication of 2D nanodevices.
