The threshold voltage(V_(th))of the p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)is investigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channe...The threshold voltage(V_(th))of the p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)is investigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier heightΦ_(1,p),polarization charge density σ_(b),and equivalent unite capacitance C_(oc).It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V_(th),and threshold voltage|V_(th)|increases with the reduction in p-GaN doping concentration and the work-function of gate metal.Meanwhile,the increase in gate dielectric relative permittivity may cause the increase in threshold voltage|V_(th)|.Additionally,the parameter influencing output current most is the p-GaN doping concentration,and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×10^(16) cm^(-3) at VGS=-12 V and VDS=-10 V.展开更多
Dynamic characteristics of the single-crystal Ga N-passivated lateral AlGaN/GaN Schottky barrier diodes(SBDs)treated with proton irradiation are investigated.Radiation-induced changes including idealized Schottky inte...Dynamic characteristics of the single-crystal Ga N-passivated lateral AlGaN/GaN Schottky barrier diodes(SBDs)treated with proton irradiation are investigated.Radiation-induced changes including idealized Schottky interface and slightly degraded on-resistance(RON)are observed under 10-Me V proton irradiation at a fluence of 10^(14)cm^(-2).Because of the existing negative polarization charges induced at GaN/AlGaN interface,the dynamic ON-resistance(RON,dyn)shows negligible degradation after a 1000-s-long forward current stress of 50 mA to devices with and without being irradiated by protons.Furthermore,the normalized RON,dynincreases by only 14%that of the initial case after a 100-s-long bias of-600 V has been applied to the irradiated devices.The high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential application in the harsh radiation environment of space.展开更多
基金Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2020B010174001 and 2020B010171002)the Ningbo Science and Technology Innovation Program 2025(Grant No.2019B10123)the National Natural Science Foundation of China(Grant No.62074122).
文摘The threshold voltage(V_(th))of the p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)is investigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier heightΦ_(1,p),polarization charge density σ_(b),and equivalent unite capacitance C_(oc).It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V_(th),and threshold voltage|V_(th)|increases with the reduction in p-GaN doping concentration and the work-function of gate metal.Meanwhile,the increase in gate dielectric relative permittivity may cause the increase in threshold voltage|V_(th)|.Additionally,the parameter influencing output current most is the p-GaN doping concentration,and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×10^(16) cm^(-3) at VGS=-12 V and VDS=-10 V.
基金Project supported by the National Natural Science Foundation of China(Grant No.62104185)the Fundamental Research Funds for the Central Universities,China(Grant No.JB211103)+1 种基金the National Natural Science Foundation for Distinguished Young Scholars,China(Grant No.61925404)the Wuhu and Xidian University Special Fund for Industry–University-Research Cooperation,China(Grant No.XWYCXY-012021010)。
文摘Dynamic characteristics of the single-crystal Ga N-passivated lateral AlGaN/GaN Schottky barrier diodes(SBDs)treated with proton irradiation are investigated.Radiation-induced changes including idealized Schottky interface and slightly degraded on-resistance(RON)are observed under 10-Me V proton irradiation at a fluence of 10^(14)cm^(-2).Because of the existing negative polarization charges induced at GaN/AlGaN interface,the dynamic ON-resistance(RON,dyn)shows negligible degradation after a 1000-s-long forward current stress of 50 mA to devices with and without being irradiated by protons.Furthermore,the normalized RON,dynincreases by only 14%that of the initial case after a 100-s-long bias of-600 V has been applied to the irradiated devices.The high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential application in the harsh radiation environment of space.
