Mn:ZnSe/ZnS/L-Cys core-shell quantum dots(QDs)sensitized La-doped nano-TiO2 thin film(QDSTF)was prepared.X-ray photoelectron spectroscopy(XPS),nanosecond transient photovoltaic(TPV),and steady state surface photovolta...Mn:ZnSe/ZnS/L-Cys core-shell quantum dots(QDs)sensitized La-doped nano-TiO2 thin film(QDSTF)was prepared.X-ray photoelectron spectroscopy(XPS),nanosecond transient photovoltaic(TPV),and steady state surface photovoltaic(SPV)technologies were used for probing the photoelectron behaviors in the Mn-doped QDSTF.The results revealed that the Mn-doped QDSTF had a p-type TPV characteristic.The bottom of the conduction band of the QDs as a sensitizer was just 0.86 eV above that of the La-doped nano-TiO2 thin film,while the acceptor level of the doped Mn2+ions was located at about 0.39 eV below and near the bottom of the conduction band of the QDs.The intensity of the SPV response of the Mn-doped QDSTF at a specific wavelength was ~2.1 times higher than that of the undoped QDSTF.The region of the SPV response of the Mn-doped QDSTF was extended by 191 nm to almost the whole visible region as compared with the undoped QDSTF one.And the region of the TPV response of the Mn-doped QDSTF was also obviously wider than that of the undoped QDSTF.These PV characteristics of the Mn-doped QDSTF may be due to the prolonged lifetime and extended diffusion length of photogenerated free charge carriers injected into the sensitized La-doped nano-TiO2 thin film.展开更多
Highly epitaxial YBa2Cu3O7-δ （YBCO） and yttria-stabilized zirconia （YSZ） bilayer thin films have been deposited on silicon-on-insulator （SOI） substrates by using in situ pulsed laser deposition （PLD） techniqu...Highly epitaxial YBa2Cu3O7-δ （YBCO） and yttria-stabilized zirconia （YSZ） bilayer thin films have been deposited on silicon-on-insulator （SOI） substrates by using in situ pulsed laser deposition （PLD） technique. In the experiment, the native amorphous SiO2 layers on some of the SOI substrates are removed by dipping them in a 10% HF solution for 15 s. Comparing several qualities of films grown on substrates with or without HF pretreatment, such as thin film crystallinity, general surface roughness, temperature dependence of resistance, surface morphology, as well as average crack spacing and crack width, naturally leads to the conclusion that preserving the native SiO2 layer on the surface of the SOI substrate can not only simplify the experimental process but can also achieve fairly high quality YSZ and YBCO thin films.展开更多
基金Project supported by the Natural Science Foundation of Hebei Province,China(Grant No.E2017203029)。
文摘Mn:ZnSe/ZnS/L-Cys core-shell quantum dots(QDs)sensitized La-doped nano-TiO2 thin film(QDSTF)was prepared.X-ray photoelectron spectroscopy(XPS),nanosecond transient photovoltaic(TPV),and steady state surface photovoltaic(SPV)technologies were used for probing the photoelectron behaviors in the Mn-doped QDSTF.The results revealed that the Mn-doped QDSTF had a p-type TPV characteristic.The bottom of the conduction band of the QDs as a sensitizer was just 0.86 eV above that of the La-doped nano-TiO2 thin film,while the acceptor level of the doped Mn2+ions was located at about 0.39 eV below and near the bottom of the conduction band of the QDs.The intensity of the SPV response of the Mn-doped QDSTF at a specific wavelength was ~2.1 times higher than that of the undoped QDSTF.The region of the SPV response of the Mn-doped QDSTF was extended by 191 nm to almost the whole visible region as compared with the undoped QDSTF one.And the region of the TPV response of the Mn-doped QDSTF was also obviously wider than that of the undoped QDSTF.These PV characteristics of the Mn-doped QDSTF may be due to the prolonged lifetime and extended diffusion length of photogenerated free charge carriers injected into the sensitized La-doped nano-TiO2 thin film.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 50672125 and 10574154)the Natural Science Foundation of Shanxi Province, China (Grant No 2009011003-1)the Youth Foundation of Shanxi Datong University, China (Grant No 2007Q10)
文摘Highly epitaxial YBa2Cu3O7-δ （YBCO） and yttria-stabilized zirconia （YSZ） bilayer thin films have been deposited on silicon-on-insulator （SOI） substrates by using in situ pulsed laser deposition （PLD） technique. In the experiment, the native amorphous SiO2 layers on some of the SOI substrates are removed by dipping them in a 10% HF solution for 15 s. Comparing several qualities of films grown on substrates with or without HF pretreatment, such as thin film crystallinity, general surface roughness, temperature dependence of resistance, surface morphology, as well as average crack spacing and crack width, naturally leads to the conclusion that preserving the native SiO2 layer on the surface of the SOI substrate can not only simplify the experimental process but can also achieve fairly high quality YSZ and YBCO thin films.
