Polycrystalline LaCrO3（LCO） thin films are deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resist...Polycrystalline LaCrO3（LCO） thin films are deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching（RS） behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of ~104 between the high resistance state（HRS） and low resistance state（LRS） and exhibits excellent endurance/retention characteristics.The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies,which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results.Further analysis shows that the reset current IR and reset power PR in the reset processes exhibit a scaling law with the resistance in LRS（R0）, which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.展开更多
Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at Tp - 191.9 ...Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at Tp - 191.9 K and a low-temperature resistance minimum at Tmin ≈ 48 K in darkness. Both magnetic field and light illumination shift the insulator-metal transition temperature Tp to be higher, while the low-temperature transport properties of the film induced by them show different trends. That is, the magnetic field and light illumination make the Tmin shift to lower and higher temperatures, respectively. The enhancement of both Tp and Train under light illumination could be explained in terms of photoinduced hole-doping and demagnetization effects of La7 /8Sr1/8MnO3.展开更多
Ba0.6Sr0.4TiO3 thin films doped with K were deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Bao.6Sro.4Ti...Ba0.6Sr0.4TiO3 thin films doped with K were deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Bao.6Sro.4TiO3 thin films have been studied in detail. The K content in Ba0.6Sro.4TiO3 thin films has a strong influence on the material＇s properties including surface morphology and the dielectric and tunable properties. It was found that the Curie temperature of K-doped Bao.6Sr0.4TiO3 films shifts to a higher value compared with that of undoped Ba0.6Sr0.4TiO3 thin films, which leads to a dielectric enhancement of K-doped Ba0.6Sr0.4TiO3 films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.展开更多
Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconduc...Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconducting cuprates the potential hole-type transparent conductors, which have been realized in Bi_(2)Sr_(2)CaCu_(2)O_(y) thin films. In this study, epitaxial superconducting Bi_(2)Sr_(2)CuO_(y) and Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin films with superior normal state conductivity are proposed as ptype transparent conductors. It is found that the Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin film with thickness 15 nm shows an average visible transmittance of 65% and room-temperature sheet resistance of 650 Ω/sq. The results further demonstrate that Bi-based cuprate superconductors can be regarded as potential p-type transparent conductors for future optoelectronic applications.展开更多
The relationship between structural and electronic phase transitions in V_(2)O_(3)thin films is of critical importance for understanding of the mechanism behind metal–insulator transition(MIT)and related technologica...The relationship between structural and electronic phase transitions in V_(2)O_(3)thin films is of critical importance for understanding of the mechanism behind metal–insulator transition(MIT)and related technological applications.Despite being extensively studied,there are currently no clear consensus and picture of the relation between structural and electronic phase transitions so far.Using V_(2)O_(3)thin films grown on r-plane Al2O3 substrates,which exhibit abrupt MIT and structural phase transition,we show that the electronic phase transition occurs concurrently with the structural phase transition as revealed by the electrical transport and Raman spectra measurements.Our result provides experimental evidence for clarifying this issue,which could form the basis of theoretical studies as well as technological applications in V_(2)O_(3).展开更多
基金Supported by the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences’Large-Scale Scientific Facility under Grant No U1532149the National Basic Research Program of China under Grant No2014CB931704
文摘Polycrystalline LaCrO3（LCO） thin films are deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching（RS） behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of ~104 between the high resistance state（HRS） and low resistance state（LRS） and exhibits excellent endurance/retention characteristics.The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies,which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results.Further analysis shows that the reset current IR and reset power PR in the reset processes exhibit a scaling law with the resistance in LRS（R0）, which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.
基金Supported by the National Basic Research Program of China under Grant No 2007CB925002, and the National Natural Science Foundation of China under Grant Nos 10774146, 10904147 and 10974205.
文摘Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at Tp - 191.9 K and a low-temperature resistance minimum at Tmin ≈ 48 K in darkness. Both magnetic field and light illumination shift the insulator-metal transition temperature Tp to be higher, while the low-temperature transport properties of the film induced by them show different trends. That is, the magnetic field and light illumination make the Tmin shift to lower and higher temperatures, respectively. The enhancement of both Tp and Train under light illumination could be explained in terms of photoinduced hole-doping and demagnetization effects of La7 /8Sr1/8MnO3.
基金Project supported by the National Natural Science Foundation of China （Grant Nos. 10874051 and 50802096） and the Innovation Project for Young Talents of Hefei Institutes of Physical Science, Chinese Academy of Sciences （Grant No. O84N391123）.
文摘Ba0.6Sr0.4TiO3 thin films doped with K were deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Bao.6Sro.4TiO3 thin films have been studied in detail. The K content in Ba0.6Sro.4TiO3 thin films has a strong influence on the material＇s properties including surface morphology and the dielectric and tunable properties. It was found that the Curie temperature of K-doped Bao.6Sr0.4TiO3 films shifts to a higher value compared with that of undoped Ba0.6Sr0.4TiO3 thin films, which leads to a dielectric enhancement of K-doped Ba0.6Sr0.4TiO3 films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.
基金Project supported by the National Natural Science Foundation of China (Grant No. 11604337)。
文摘Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconducting cuprates the potential hole-type transparent conductors, which have been realized in Bi_(2)Sr_(2)CaCu_(2)O_(y) thin films. In this study, epitaxial superconducting Bi_(2)Sr_(2)CuO_(y) and Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin films with superior normal state conductivity are proposed as ptype transparent conductors. It is found that the Bi_(2)Sr_(1.8)Nd_(0.2)CuO_(y) thin film with thickness 15 nm shows an average visible transmittance of 65% and room-temperature sheet resistance of 650 Ω/sq. The results further demonstrate that Bi-based cuprate superconductors can be regarded as potential p-type transparent conductors for future optoelectronic applications.
基金Supported by the National Key R&D Program of China(Grant No.2017YFA0403600)Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences Large-Scale Scientific Facility(Grant No.U1532149).
文摘The relationship between structural and electronic phase transitions in V_(2)O_(3)thin films is of critical importance for understanding of the mechanism behind metal–insulator transition(MIT)and related technological applications.Despite being extensively studied,there are currently no clear consensus and picture of the relation between structural and electronic phase transitions so far.Using V_(2)O_(3)thin films grown on r-plane Al2O3 substrates,which exhibit abrupt MIT and structural phase transition,we show that the electronic phase transition occurs concurrently with the structural phase transition as revealed by the electrical transport and Raman spectra measurements.Our result provides experimental evidence for clarifying this issue,which could form the basis of theoretical studies as well as technological applications in V_(2)O_(3).
