In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed...In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For a Co layer with a thickness no larger than i nm, epitaxially aligned CoSi2 films readily grow on silicon （100） substrate and exhibit good morphological stabilities up to 600 ℃. For a Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of the Ni layer for epitaxial alignment of NiSi2 on silicon （100） substrate. The larger lattice mismatch between the CoSi2 film and the silicon substrate is the root cause for the smaller critical thickness of the Co layer.展开更多
Taking the actual operating condition of complementary metal oxide semiconductor （CMOS） circuit into account, conventional direct current （DC） stress study on negative bias temperature instability （NBTI） neglect...Taking the actual operating condition of complementary metal oxide semiconductor （CMOS） circuit into account, conventional direct current （DC） stress study on negative bias temperature instability （NBTI） neglects the detrapping of oxide positive charges and the recovery of interface states under the ＇low＇ state of p-channel metal oxide semiconductor field effect transistors （MOSFETs） inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.展开更多
基金Project supported by the "China National Science and Technology Major Project 02" (Grant No. 2009ZX02035-003)the National Natural Science Foundation of China (Grant No. 61176090)the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
文摘In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For a Co layer with a thickness no larger than i nm, epitaxially aligned CoSi2 films readily grow on silicon （100） substrate and exhibit good morphological stabilities up to 600 ℃. For a Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of the Ni layer for epitaxial alignment of NiSi2 on silicon （100） substrate. The larger lattice mismatch between the CoSi2 film and the silicon substrate is the root cause for the smaller critical thickness of the Co layer.
基金Project supported by the National Natural Science Foundation of China （Grant No 60376024） and the National High Technology Research and Development Program of China （Grant No 2003AA1Z1630）. The authors thank SMIC for the supply of test devices.
文摘Taking the actual operating condition of complementary metal oxide semiconductor （CMOS） circuit into account, conventional direct current （DC） stress study on negative bias temperature instability （NBTI） neglects the detrapping of oxide positive charges and the recovery of interface states under the ＇low＇ state of p-channel metal oxide semiconductor field effect transistors （MOSFETs） inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.
