The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocur...The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.展开更多
基金supported by the National Natural Science Foundation of China (No. 11761056)the Natural Science Foundation of Qinghai Province (No. 2020-ZJ-920)the planning project of Qinghai Minzu University (No. 07M2021001)
基金Supported by the National Basic Research Program of China under Grant No 2015CB921503the National Natural Science Foundation of China under Grant Nos 61474114,11574302,61627822 and 11704032the National Key Research and Development Program of China under Grant Nos 2018YFA0209103,2016YFB0402303 and 2016YFB0400101
文摘The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.
