An n-TiO_(2)/n−Si isotype heterojunction is fabricated by depositing TiO_(2) thin films onto n−Si substrates.Obvious photovoltaic behaviors are observed in this isotype heterojunction.The open circuit voltage and shor...An n-TiO_(2)/n−Si isotype heterojunction is fabricated by depositing TiO_(2) thin films onto n−Si substrates.Obvious photovoltaic behaviors are observed in this isotype heterojunction.The open circuit voltage and short circuit current of the heterojunction can reach 123 mV and 20µA/cm^(2),respectively.The mechanism for the photovoltaic behaviors can be understood in terms of the band alignment of the heterojunction.The results reported may provide a feasible route to easily available and low-cost isotyped photovoltaic devices.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 60907046.
文摘An n-TiO_(2)/n−Si isotype heterojunction is fabricated by depositing TiO_(2) thin films onto n−Si substrates.Obvious photovoltaic behaviors are observed in this isotype heterojunction.The open circuit voltage and short circuit current of the heterojunction can reach 123 mV and 20µA/cm^(2),respectively.The mechanism for the photovoltaic behaviors can be understood in terms of the band alignment of the heterojunction.The results reported may provide a feasible route to easily available and low-cost isotyped photovoltaic devices.
