High-reflectivity Al-based n-electrode is used to enhance the luminescence properties of InGaN-based 395nm flip-chip near-ultraviolet （UV） light-emitting diodes. The Al-only metal layer could form the Ohmic contact ...High-reflectivity Al-based n-electrode is used to enhance the luminescence properties of InGaN-based 395nm flip-chip near-ultraviolet （UV） light-emitting diodes. The Al-only metal layer could form the Ohmic contact on the plasma etched n-GaN by means of chemical pre-treatment, with the lowest specific contact resistance of 2.211 × 10^-5 Ω. cm2. The AI n-electrodes enhance light output power of the 395 nm flip-chip near-UV light-emitting diodes by more than 33% compared with the Ti/AI n-electrodes. Meanwhile, the electrical characteristics of these chips with two types of n-electrodes do not show any significant discrepancy. The near-field light distribution measurement of packaged chips confirms that the enhanced luminescence is ascribed to the high refleetivity of the Al electrodes in the UV region. After the accelerated aging test for over 1000 h, the luminous degradation of the packaged chips with Al n-electrodes is less than 3%, which proves the reliability of these chips with the Al-based electrodes. Our approach shows a simplified design and fabrication of high-refleetivity n-electrode for flip-chip near-UV light emitting diodes.展开更多
基金Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400901 and2016YFB0400804the Key Laboratory of Infrared Imaging Materials and Detectors of Shanghai Institute of Technical Physics of Chinese Academy of Sciences under Grant NoⅡMDKFJJ-15-07+1 种基金the National Natural Science Foundation of China under Grant Nos 61675079,11574166 and 61377034the China Postdoctoral Foundation under Grant No 2016M602287
文摘High-reflectivity Al-based n-electrode is used to enhance the luminescence properties of InGaN-based 395nm flip-chip near-ultraviolet （UV） light-emitting diodes. The Al-only metal layer could form the Ohmic contact on the plasma etched n-GaN by means of chemical pre-treatment, with the lowest specific contact resistance of 2.211 × 10^-5 Ω. cm2. The AI n-electrodes enhance light output power of the 395 nm flip-chip near-UV light-emitting diodes by more than 33% compared with the Ti/AI n-electrodes. Meanwhile, the electrical characteristics of these chips with two types of n-electrodes do not show any significant discrepancy. The near-field light distribution measurement of packaged chips confirms that the enhanced luminescence is ascribed to the high refleetivity of the Al electrodes in the UV region. After the accelerated aging test for over 1000 h, the luminous degradation of the packaged chips with Al n-electrodes is less than 3%, which proves the reliability of these chips with the Al-based electrodes. Our approach shows a simplified design and fabrication of high-refleetivity n-electrode for flip-chip near-UV light emitting diodes.
