低维钙钛矿太阳能电池(Low-Dimensional Perovskite Solar Cells,LD PSCs)是一种稳定性好、疏水性强的新型钙钛矿光伏器件,在新能源领域受到了广泛的关注。本实验以领域内的前沿进展为出发点,提供丁胺(Butylammonium,BA)离子、半胱氨酸...低维钙钛矿太阳能电池(Low-Dimensional Perovskite Solar Cells,LD PSCs)是一种稳定性好、疏水性强的新型钙钛矿光伏器件,在新能源领域受到了广泛的关注。本实验以领域内的前沿进展为出发点,提供丁胺(Butylammonium,BA)离子、半胱氨酸(2-氨基-3-巯基丙酸,Cysteine,Cys)离子作为有机间隔阳离子,合成了低维钙钛矿晶体并制备出以(BA)2(MA)n-1PbnI3n+1或(Cys)2(MA)n-1PbnI3n+1为活性层的钙钛矿太阳能电池,并通过X射线衍射检测、紫外-可见吸收检测等手段对产品进行表征,之后测定了钙钛矿器件的能量转换效率。本实验难度适中,涉及光伏器件的制备与表征,旨在激励本科生对前沿光电研究产生兴趣、培养其科研能力。展开更多
As a common impurity in 4 H silicon carbide(4 H-Si C),hydrogen(H)may play a role in tuning the electronic properties of 4 H-Si C.In this work,we systemically explore the effect of H on the electronic properties of bot...As a common impurity in 4 H silicon carbide(4 H-Si C),hydrogen(H)may play a role in tuning the electronic properties of 4 H-Si C.In this work,we systemically explore the effect of H on the electronic properties of both n-type and p-type4 H-Si C.The passivation of H on intrinsic defects such as carbon vacancies(V_(Si) )and silicon vacancies(V_(Si)) in 4 H-Si C is also evaluated.We find that interstitial H at the bonding center of the Si-C bond(H_(i)^(bc)) and interstitial H at the tetrahedral center of Si(H_(i)^(bc)) dominate the defect configurations of H in p-type and n-type 4 H-Si C,respectively.In n-type 4 H-Si C,the compensation of HSi-te iis found to pin the Fermi energy and hinder the increase of the electron concentration for highly N-doped 4 H-Si C.The compensation of Hbc iis negligible compared to that of V_(Si)on the p-type doping of Al-doped 4 H-Si C.We further examine whether H can passivate VCand improve the carrier lifetime in 4 H-Si C.It turns out that nonequilibrium passivation of VCby H is effective to eliminate the defect states of V_(Si),which enhances the carrier lifetime of moderately doped 4 H-Si C.Regarding the quantum-qubit applications of 4 H-Si C,we find that H can readily passivate V_(Si)during the creation of V_(Si)centers.Thermal annealing is needed to decompose the resulting V_(Si)-n H(n=1-4)complexes and promote the uniformity of the photoluminescence of V_(Si)arrays in 4 H-Si C.The current work may inspire the impurity engineering of H in 4 H-Si C.展开更多
The p-type doping efficiency of 4 H silicon carbide(4 H-SiC)is rather low due to the large ionization energies of p-type dopants.Such an issue impedes the exploration of the full advantage of 4 H-SiC for semiconductor...The p-type doping efficiency of 4 H silicon carbide(4 H-SiC)is rather low due to the large ionization energies of p-type dopants.Such an issue impedes the exploration of the full advantage of 4 H-SiC for semiconductor devices.In this study,we show that co-doping group-IVB elements effectively decreases the ionization energy of the most widely used p-type dopant,i.e.,aluminum(Al),through the defect-level repulsion between the energy levels of group-IVB elements and that of Al in 4 H-SiC.Among group-IVB elements Ti has the most prominent effectiveness.Ti decreases the ionization energy of Al by nearly 50%,leading to a value as low as~0.13 eV.As a result,the ionization rate of Al with Ti co-doping is up to~5 times larger than that without co-doping at room temperature when the doping concentration is up to 10^(18)cm^(-3).This work may encourage the experimental co-doping of group-IVB elements such as Ti and Al to significantly improve the p-type doping efficiency of 4 H-SiC.展开更多
文摘低维钙钛矿太阳能电池(Low-Dimensional Perovskite Solar Cells,LD PSCs)是一种稳定性好、疏水性强的新型钙钛矿光伏器件,在新能源领域受到了广泛的关注。本实验以领域内的前沿进展为出发点,提供丁胺(Butylammonium,BA)离子、半胱氨酸(2-氨基-3-巯基丙酸,Cysteine,Cys)离子作为有机间隔阳离子,合成了低维钙钛矿晶体并制备出以(BA)2(MA)n-1PbnI3n+1或(Cys)2(MA)n-1PbnI3n+1为活性层的钙钛矿太阳能电池,并通过X射线衍射检测、紫外-可见吸收检测等手段对产品进行表征,之后测定了钙钛矿器件的能量转换效率。本实验难度适中,涉及光伏器件的制备与表征,旨在激励本科生对前沿光电研究产生兴趣、培养其科研能力。
基金Project supported by the National Key Research and Development Program of China(Grant No.2018YFB2200101)the National Natural Science Foundation of China(Grant Nos.91964107 and U20A20209)+2 种基金the“Pioneer”and“Leading Goose”Research and Development Program of Zhejiang Province,China(Grant No.2022C01021)partial support from the National Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005)The National Supercomputer Center in Tianjin is acknowledged for computational support。
文摘As a common impurity in 4 H silicon carbide(4 H-Si C),hydrogen(H)may play a role in tuning the electronic properties of 4 H-Si C.In this work,we systemically explore the effect of H on the electronic properties of both n-type and p-type4 H-Si C.The passivation of H on intrinsic defects such as carbon vacancies(V_(Si) )and silicon vacancies(V_(Si)) in 4 H-Si C is also evaluated.We find that interstitial H at the bonding center of the Si-C bond(H_(i)^(bc)) and interstitial H at the tetrahedral center of Si(H_(i)^(bc)) dominate the defect configurations of H in p-type and n-type 4 H-Si C,respectively.In n-type 4 H-Si C,the compensation of HSi-te iis found to pin the Fermi energy and hinder the increase of the electron concentration for highly N-doped 4 H-Si C.The compensation of Hbc iis negligible compared to that of V_(Si)on the p-type doping of Al-doped 4 H-Si C.We further examine whether H can passivate VCand improve the carrier lifetime in 4 H-Si C.It turns out that nonequilibrium passivation of VCby H is effective to eliminate the defect states of V_(Si),which enhances the carrier lifetime of moderately doped 4 H-Si C.Regarding the quantum-qubit applications of 4 H-Si C,we find that H can readily passivate V_(Si)during the creation of V_(Si)centers.Thermal annealing is needed to decompose the resulting V_(Si)-n H(n=1-4)complexes and promote the uniformity of the photoluminescence of V_(Si)arrays in 4 H-Si C.The current work may inspire the impurity engineering of H in 4 H-Si C.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFA0205704 and 2018YFB2200101)the National Natural Science Foundation of China(Grant Nos.91964107 and 61774133)+2 种基金Fundamental Research Funds for the Central Universities,China(Grant No.2018XZZX003-02)the National Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005)Zhejiang University Education Foundation Global Partnership Fund。
文摘The p-type doping efficiency of 4 H silicon carbide(4 H-SiC)is rather low due to the large ionization energies of p-type dopants.Such an issue impedes the exploration of the full advantage of 4 H-SiC for semiconductor devices.In this study,we show that co-doping group-IVB elements effectively decreases the ionization energy of the most widely used p-type dopant,i.e.,aluminum(Al),through the defect-level repulsion between the energy levels of group-IVB elements and that of Al in 4 H-SiC.Among group-IVB elements Ti has the most prominent effectiveness.Ti decreases the ionization energy of Al by nearly 50%,leading to a value as low as~0.13 eV.As a result,the ionization rate of Al with Ti co-doping is up to~5 times larger than that without co-doping at room temperature when the doping concentration is up to 10^(18)cm^(-3).This work may encourage the experimental co-doping of group-IVB elements such as Ti and Al to significantly improve the p-type doping efficiency of 4 H-SiC.
