We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities i...We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.展开更多
Mg-doped AlxGa1-xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor depo- sition （MOCVD） using an indium-assisted growth method. At room temperature, the resistivity of Mg-doped Alo.43G...Mg-doped AlxGa1-xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor depo- sition （MOCVD） using an indium-assisted growth method. At room temperature, the resistivity of Mg-doped Alo.43Gao.57N epilayer grown under indium （In） ambient is of the order of 10^4Ω.cm, while the resistivity of Mg-doped Al0.43Ga0.57N grown without In assistance is of the order of 10^6Ω.cm. The ultraviolet light-emitting diodes （UV-LEDs） using the In-assisted Mg-doped Al0.43Ga0.57N as the p-type layers were fabricated to verify the function of indium ambient. It is found that there are a lower turn-on voltage and a lower diode series resistance in the UV-LEDs fabricated with p-type Al0.43Ga0.57 N layers grown under In-ambient.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 10774001, 60736033, 60776041 and 60876041, and National Basic Research Program of China under Grant Nos 2006CB604908 and 2006CB921607, and the National Key Basic R＆D Plan of China under Grant Nos TG2007CB307004.
文摘We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60876041, 60577030, 60736033 and 10774001, and the National Basic Research Program of China under Grant Nos 2006CB604908 and 2006CB921607, and the National Key Basic Research Program of China under No TG2007CB307004.
文摘Mg-doped AlxGa1-xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor depo- sition （MOCVD） using an indium-assisted growth method. At room temperature, the resistivity of Mg-doped Alo.43Gao.57N epilayer grown under indium （In） ambient is of the order of 10^4Ω.cm, while the resistivity of Mg-doped Al0.43Ga0.57N grown without In assistance is of the order of 10^6Ω.cm. The ultraviolet light-emitting diodes （UV-LEDs） using the In-assisted Mg-doped Al0.43Ga0.57N as the p-type layers were fabricated to verify the function of indium ambient. It is found that there are a lower turn-on voltage and a lower diode series resistance in the UV-LEDs fabricated with p-type Al0.43Ga0.57 N layers grown under In-ambient.
