GaN epilayers with a porous SiN_(x) interlayer were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates.It is found that the crystalline qualities are significantly improved with SiN_(x) gr...GaN epilayers with a porous SiN_(x) interlayer were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates.It is found that the crystalline qualities are significantly improved with SiN_(x) growth.The improvement is attributed to the reduction of the density of threading dislocations(TDs)by an over-growth process of GaN grown on a SiN_(x) interlayer.The influence mechanism of SiN_(x) interlayers on GaN growth mode is also discussed.展开更多
GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH_(4) in a metal organic chemical vapor deposition system.The influence of the SiH_(4) pre-treatment conditions on the SiC surface ...GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH_(4) in a metal organic chemical vapor deposition system.The influence of the SiH_(4) pre-treatment conditions on the SiC surface is carefully investigated.It is found that SiH_(4) could react with the SiC surface oxide,which will change the surface termination.Moreover,our experiments demonstrate that SiH_(4) pre-treatment can distinctly influence the AlGaN nucleation layer and the basic characteristics of GaN.展开更多
Near-ultraviolet （UV） InGaN/AIGaN light-emitting diodes （LEDs） are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-OaN micro-rods are formed...Near-ultraviolet （UV） InGaN/AIGaN light-emitting diodes （LEDs） are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-OaN micro-rods are formed above the interface of p-A1GaN//p-OaN due to the rapid growth rate of p-OaN in the vertical direction. The p-OaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electrolumi- nescence intensities of the 372nm UV LED lamps with p-OaN micro rods are 88% higher than those of the i/at surface LED samples.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61076045,11004020,60976010,10804040,60877020 and 10804014the National High Technology Research and Development Program of China under Grant No 2009AA03Z401+2 种基金Scientific Research Foundation for Doctoral Program of Liaoning Province under Grant No 20101016Youth Teacher Cultivation Fund by Dalian University of Technology,the Fundamental Research Funds for the Central Universities(DUT10LK01,DUT11LK43)the Doctoral Scientific Research Starting Foundation of Liaoning Province(No 20081081).
文摘GaN epilayers with a porous SiN_(x) interlayer were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates.It is found that the crystalline qualities are significantly improved with SiN_(x) growth.The improvement is attributed to the reduction of the density of threading dislocations(TDs)by an over-growth process of GaN grown on a SiN_(x) interlayer.The influence mechanism of SiN_(x) interlayers on GaN growth mode is also discussed.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61076045,11004020,60976010,10804040,60877020 and 10804014the National Basic Research Program of China under Grant No 2011CB302005+3 种基金the National High-Technology Research and Development Program of China under Grant Nos 2009AA03Z401 and 2011AA03A102the Scientific Research Foundation for the Doctoral program of Liaoning Province under Grant No 20101016Youth Teacher Cultivation Fund by Dalian University of Technologythe Fundamental Research Funds for the Central Universities(DUT10LK01,DUT11LK43,DUT11RC(3)45).
文摘GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH_(4) in a metal organic chemical vapor deposition system.The influence of the SiH_(4) pre-treatment conditions on the SiC surface is carefully investigated.It is found that SiH_(4) could react with the SiC surface oxide,which will change the surface termination.Moreover,our experiments demonstrate that SiH_(4) pre-treatment can distinctly influence the AlGaN nucleation layer and the basic characteristics of GaN.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61223005, 61376046, and 11004020, the Na- tional High-Technology Research and Development Program of China under Grant No 2011AA03A102, the Fundamental Research Funds for the Central Universities under Grant Nos DUT12LK22, DUT11LK43, and DUTllRC（3）45, and the Research Fund for the Doctoral Program of Higher Education under Grant No 20110041120045.
文摘Near-ultraviolet （UV） InGaN/AIGaN light-emitting diodes （LEDs） are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-OaN micro-rods are formed above the interface of p-A1GaN//p-OaN due to the rapid growth rate of p-OaN in the vertical direction. The p-OaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electrolumi- nescence intensities of the 372nm UV LED lamps with p-OaN micro rods are 88% higher than those of the i/at surface LED samples.
