Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial g...Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi- wafer 3C-SiC films on Si（100） substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition （HWLPCVD） system which was designed to be have a high-throughput, multi-wafer （3×2-inch） capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%-7% and 6.7%~8%, respectively, and within a run, the deviations of wafer-to- wafer thickness and sheet resistance are tess than 1% and 0.8%, respectively.展开更多
Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition （LPCVD） with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 duri...Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition （LPCVD） with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction （XRD） patterns indicate that the deposited films are highly textured （111） orientation. The surface morphology and roughness are determined by scanning electron microscopy （SEM） and atomic force microscopy （AFM）. The surface features are spherulitic texture with average grain size of 100nm, and the rms roughness is 20nm （AFM 5×5 μm images）. Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems （MEMS） devices such as SiC based filters.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60876003 and 60606003)the Science Foundation of the Chinese Academy of Sciences(Grant No.yz200702)
文摘Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi- wafer 3C-SiC films on Si（100） substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition （HWLPCVD） system which was designed to be have a high-throughput, multi-wafer （3×2-inch） capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%-7% and 6.7%~8%, respectively, and within a run, the deviations of wafer-to- wafer thickness and sheet resistance are tess than 1% and 0.8%, respectively.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60406010 and 0713170000, and National Hi-Teeh Researeh and Development Programme under Grant No 2006AA04Z339.
文摘Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition （LPCVD） with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction （XRD） patterns indicate that the deposited films are highly textured （111） orientation. The surface morphology and roughness are determined by scanning electron microscopy （SEM） and atomic force microscopy （AFM）. The surface features are spherulitic texture with average grain size of 100nm, and the rms roughness is 20nm （AFM 5×5 μm images）. Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems （MEMS） devices such as SiC based filters.
