MEMS 技术显示了其在微波领域的巨大应用潜力。利用 RF MEMS 开关制造的 RF MEMS 移相器具有插损小、功耗低、宽带宽、体积小等优点,因此成为研究的热点。本文对国际上 R F M E M S的研究和发展进行了比较全面的综述,并介绍了... MEMS 技术显示了其在微波领域的巨大应用潜力。利用 RF MEMS 开关制造的 RF MEMS 移相器具有插损小、功耗低、宽带宽、体积小等优点,因此成为研究的热点。本文对国际上 R F M E M S的研究和发展进行了比较全面的综述,并介绍了 DMTL 移相器,该移相器在 DC￣30GHz 范围内具有较好的线性度,在20GHz 时相移为0°/11.6° /32.6°/48.5°,反射损失好于-11dB,插损小于 -1.8dB。最后分析了各种移相器的特点和设计、制造的难点,对 MEMS 移相器的发展进行了展望。展开更多
A novel miniaturization of inductively coupled plasma （ICP） source based on printed circuit produced using micro-fabrication techniques is presented. The basic parameters of the novel ICP, including its radio freque...A novel miniaturization of inductively coupled plasma （ICP） source based on printed circuit produced using micro-fabrication techniques is presented. The basic parameters of the novel ICP, including its radio frequency, power loss, size, and argon consumption are less than 1% of that for the case of atmospheric pressure ICP source. For example, at 100 Pa of argon gas pressure, the present ICP source can be ignited by using the rf power less than 3.5 W. Potential applications of the ICP is discussed.展开更多
Silicon nanowires （SiNWs） were grown directly from n-（111） single-crystal silicon （c-Si） substrate based on a solid- liquid-solid mechanism, and Au film was used as a metallic catalyst. The room temperature phot...Silicon nanowires （SiNWs） were grown directly from n-（111） single-crystal silicon （c-Si） substrate based on a solid- liquid-solid mechanism, and Au film was used as a metallic catalyst. The room temperature photoluminescence properties of SiNWs were observed by an Xe lamp with an exciting wavelength of 350 nm. The results show that the SiNWs exhibit a strongly blue luminescent band in the wavelength range 40-480 nm at an emission peak position of 420 nm. The luminescent mechanism of SiNWs indicates that the blue luminescence is attributed to the oxygen-related defects, which are in SiOx amorphous oxide shells around the crystalline core of SiNWs.展开更多
文摘 MEMS 技术显示了其在微波领域的巨大应用潜力。利用 RF MEMS 开关制造的 RF MEMS 移相器具有插损小、功耗低、宽带宽、体积小等优点,因此成为研究的热点。本文对国际上 R F M E M S的研究和发展进行了比较全面的综述,并介绍了 DMTL 移相器,该移相器在 DC￣30GHz 范围内具有较好的线性度,在20GHz 时相移为0°/11.6° /32.6°/48.5°,反射损失好于-11dB,插损小于 -1.8dB。最后分析了各种移相器的特点和设计、制造的难点,对 MEMS 移相器的发展进行了展望。
文摘A novel miniaturization of inductively coupled plasma （ICP） source based on printed circuit produced using micro-fabrication techniques is presented. The basic parameters of the novel ICP, including its radio frequency, power loss, size, and argon consumption are less than 1% of that for the case of atmospheric pressure ICP source. For example, at 100 Pa of argon gas pressure, the present ICP source can be ignited by using the rf power less than 3.5 W. Potential applications of the ICP is discussed.
基金Supported by the Natural Science Foundation of Hebei Province （E2008000626） and the Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science （KLSM05-03）.
文摘Silicon nanowires （SiNWs） were grown directly from n-（111） single-crystal silicon （c-Si） substrate based on a solid- liquid-solid mechanism, and Au film was used as a metallic catalyst. The room temperature photoluminescence properties of SiNWs were observed by an Xe lamp with an exciting wavelength of 350 nm. The results show that the SiNWs exhibit a strongly blue luminescent band in the wavelength range 40-480 nm at an emission peak position of 420 nm. The luminescent mechanism of SiNWs indicates that the blue luminescence is attributed to the oxygen-related defects, which are in SiOx amorphous oxide shells around the crystalline core of SiNWs.
