Cu2ZnSnS（e）4 （CZTS（e）） solar cells have attracted much attention due to the elemental abundance and the non- toxicity. However, the record efficiency of 12.6% for CuzZnSn（S,Se）4 （CZTSSe） solar cells is much ...Cu2ZnSnS（e）4 （CZTS（e）） solar cells have attracted much attention due to the elemental abundance and the non- toxicity. However, the record efficiency of 12.6% for CuzZnSn（S,Se）4 （CZTSSe） solar cells is much lower than that of Cu（In,Ga）See （CIGS） solar cells. One crucial reason is the recombination at interfaces. In recent years, large amount inves- tigations have been done to analyze the interfacial problems and improve the interfacial properties via a variety of methods. This paper gives a review of progresses on interfaces of CZTS（e） solar cells, including： （i） the band alignment optimization at buffer/CZTS（e） interface, （ii） tailoring the thickness of MoS（e）2 interfacial layers between CZTS（e） absorber and Mo back contact, （iii） the passivation of rear interface, （iv） the passivation of front interface, and （v） the etching of secondary phases.展开更多
Cd-free kesterite structured solar cells are currently attracting attention because they are environmentally friendly. It is reported that Zn(O,S) can be used as a buffer layer in these solar cells. However, the band ...Cd-free kesterite structured solar cells are currently attracting attention because they are environmentally friendly. It is reported that Zn(O,S) can be used as a buffer layer in these solar cells. However, the band alignment is not clear and the carrier concentration of Zn(O,S) layer is low. In this study, the band alignment of the Zn(O,S)/Cu_2 ZnSnSe_4 p–n junction solar cell and the effect of In_2 S_3/Zn(O,S) double buffer layer are studied by numerically simulation with wxAMPS software.By optimizing the band gap structure between Zn(O,S) buffer layer and Cu_2 ZnSnSe_4 absorber layer and enhancing the carrier concentration of Zn(O,S) layer, the device efficiency can be improved greatly. The value of CBO is in a range of 0 eV–0.4 eV for S/(S + O)= 0.6–0.8 in Zn(O,S). The In_2 S_3 is mainly used to increase the carrier concentration when it is used as a buffer layer together with Zn(O,S).展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572132,51372121,and 61674082)the Natural Science Foundation of Key Project of Tianjin City,China(Grant No.16JCZDJC30700)+1 种基金the Yang Fan Innovative and Entrepreneurial Research Team Project of China(Grant No.2014YT02N037)111 Project,China(Grant No.B16027)
文摘Cu2ZnSnS（e）4 （CZTS（e）） solar cells have attracted much attention due to the elemental abundance and the non- toxicity. However, the record efficiency of 12.6% for CuzZnSn（S,Se）4 （CZTSSe） solar cells is much lower than that of Cu（In,Ga）See （CIGS） solar cells. One crucial reason is the recombination at interfaces. In recent years, large amount inves- tigations have been done to analyze the interfacial problems and improve the interfacial properties via a variety of methods. This paper gives a review of progresses on interfaces of CZTS（e） solar cells, including： （i） the band alignment optimization at buffer/CZTS（e） interface, （ii） tailoring the thickness of MoS（e）2 interfacial layers between CZTS（e） absorber and Mo back contact, （iii） the passivation of rear interface, （iv） the passivation of front interface, and （v） the etching of secondary phases.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572132,61674082,and 61774089)the National Key Research and Development Program of China(Grant No.2018YFB1500202)+1 种基金the Tianjin Natural Science Foundation of Key Project of China(Grant Nos.16JCZDJC30700and 18JCZDJC31200)the 111 Project,China(Grant No.B16027)
文摘Cd-free kesterite structured solar cells are currently attracting attention because they are environmentally friendly. It is reported that Zn(O,S) can be used as a buffer layer in these solar cells. However, the band alignment is not clear and the carrier concentration of Zn(O,S) layer is low. In this study, the band alignment of the Zn(O,S)/Cu_2 ZnSnSe_4 p–n junction solar cell and the effect of In_2 S_3/Zn(O,S) double buffer layer are studied by numerically simulation with wxAMPS software.By optimizing the band gap structure between Zn(O,S) buffer layer and Cu_2 ZnSnSe_4 absorber layer and enhancing the carrier concentration of Zn(O,S) layer, the device efficiency can be improved greatly. The value of CBO is in a range of 0 eV–0.4 eV for S/(S + O)= 0.6–0.8 in Zn(O,S). The In_2 S_3 is mainly used to increase the carrier concentration when it is used as a buffer layer together with Zn(O,S).
