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热中子辐照 GaAs 损伤研究
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作者 夏宗璜 刘士杰 杨胜东 《原子能科学技术》 EI CAS CSCD 北大核心 1998年第4期347-351,共5页
在热中子与快中子成份比大于70的条件下,用6.5×1016cm-2和6.5×1018cm-2剂量水平辐照纯净GaAs样品,研究由于嬗变产生的杂质和损伤。所得结果表明:热中子对Ga、As发生俘获核反应,其最终稳... 在热中子与快中子成份比大于70的条件下,用6.5×1016cm-2和6.5×1018cm-2剂量水平辐照纯净GaAs样品,研究由于嬗变产生的杂质和损伤。所得结果表明:热中子对Ga、As发生俘获核反应,其最终稳定产物Ge作为两性杂质元素被导入;复杂的移位缺陷形成及其热行为是影响辐照后GaAs电学性质变化的重要因素。 展开更多
关键词 热中子 辐照损伤 砷化镓 嬗变 电性质
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STOPPING POWERS OF HEAVY IONS IN SILVER
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作者 金长文 卢希庭 +4 位作者 黄小菁 叶沿林 江栋兴 刘洪涛 夏宗璜 《Nuclear Science and Techniques》 SCIE CAS CSCD 1993年第4期241-244,共4页
With the method of Rutherford backscattering of heavy ions from heavy substrate, the stopping powers of 11B, 12C and 19F in silver film were measured at energies from 0.11-0.53 MeV / u. The results are compared with t... With the method of Rutherford backscattering of heavy ions from heavy substrate, the stopping powers of 11B, 12C and 19F in silver film were measured at energies from 0.11-0.53 MeV / u. The results are compared with the previous experimental data and the semiempirical calculations of TRIM-90. 展开更多
关键词 RBS STOPPING POWER HEAVY IONS
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Planar Optical Waveguides in KNbO_(3) Formed by MeV B and He Ion Implantation
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作者 LI Yan XIA Zong-luiang +5 位作者 SHEN Ding-yu WANG Xue-mei ZHAO Qiang MA Xiao-yan SHEN De-zhong WANG Kui-ru 《Chinese Physics Letters》 SCIE CAS CSCD 1999年第10期731-733,共3页
Planar optical waveguides in single crystals of KNbOs were fabricated by MeV B and He ion implantation.The depth profiles of radiation damage in these waveguides were compared and analyzed by high resolution transmiss... Planar optical waveguides in single crystals of KNbOs were fabricated by MeV B and He ion implantation.The depth profiles of radiation damage in these waveguides were compared and analyzed by high resolution transmission electron microscope.Non leaky waveguiding modes(TEo and TMo),which are due to implantation induced increase of rib and nc,were observed in 6.0 MeV B ion implantated waveguides with a dose of 1×10^(15)cm^(-2). 展开更多
关键词 KNbO_(3) WAVEGUIDES IMPLANTATION
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Identification and Rutherford Backscattering Measurement of MeV Carbon Cluster Ions
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作者 WANG Xue-mei LU Xi-ting +4 位作者 XIA Zong-huang SHEN Ding-yu ZHENG Tao ZHAO Qiang ZHAO Zi-qiang 《Chinese Physics Letters》 SCIE CAS CSCD 1997年第9期712-714,共3页
The MeV carbon cluster ions provided by 1.7 MV tandem accelerator were identified and Rutherford backscattering spectra of MeV carbon cluster ions on the gold film were measured with silicon surface barrier detector.
关键词 CLUSTER FILM BACKSCATTERING
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Ni ION INDUCED X-RAY EMISSION
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作者 XIA Zonghuang LU Xiting +3 位作者 YAO Shude WANG Demin LIU Jiarui ZHU Peiran 《Chinese Physics Letters》 SCIE CAS CSCD 1989年第6期257-260,共4页
The thick targets of Ti,Fet Ni and Zn have been bombarded with 3 to 7Me V nickel ions.The X-ray spectra of the projectiles and targets showed a significant difference in the intensity of the X-ray radiation for severa... The thick targets of Ti,Fet Ni and Zn have been bombarded with 3 to 7Me V nickel ions.The X-ray spectra of the projectiles and targets showed a significant difference in the intensity of the X-ray radiation for several targets.The explanation of this phenomenon by quasimolecular orbital energy level correlation diagrams and the possible application of Ni ion induced X-ray emission were discussed. 展开更多
关键词 NICKEL EXPLANATION THICK
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