An analytic solution derived by multisection model to the small-signal frequency response （SSFR） of wavelength conversion based on cross-gain modulation （XGM） in semiconductor optical amplifiers （SOAs） is presen...An analytic solution derived by multisection model to the small-signal frequency response （SSFR） of wavelength conversion based on cross-gain modulation （XGM） in semiconductor optical amplifiers （SOAs） is presented. The result contains details that can affect the characteristics of SSFR significantly more than previous ones.展开更多
Nonlinear patterning （NLP） effect in wavelength conversion based on transient cross-phase modulation （XPM） in semiconductor optical amplifier （SOA） assisted with a detuning filter is theoretically investigated. ...Nonlinear patterning （NLP） effect in wavelength conversion based on transient cross-phase modulation （XPM） in semiconductor optical amplifier （SOA） assisted with a detuning filter is theoretically investigated. A non- adiabatic model is used to estimate the ultrafast dynamics of gain, phase and electron temperature in the SOA. Simulation results show that the NLP can be greatly suppressed by introducing an assist light, especially for the probe wavelength distant from gain peak. Furthermore, the results also indicate that the improvement is more evident for long wavelength probe light and assist light in counter-propagating configuration.展开更多
A scheme of measuring the carrier recovery time in semiconductor optical amplifiers （SOAs） based on dual pump Four-wave mixing technology is presented. The carrier recovery times under 120mA, 180mA 240mA and 300mA i...A scheme of measuring the carrier recovery time in semiconductor optical amplifiers （SOAs） based on dual pump Four-wave mixing technology is presented. The carrier recovery times under 120mA, 180mA 240mA and 300mA injected currents are measured to be 111ps, 81ps, 71ps and 53ps, respectively. The carrier recovery time of the spacing between the two umps is also investigated. The experimental results show that the conversion efficiency keeps constant when the spacing of the two pumps varies within a small range.展开更多
基金Project supported by the National Nature Science Foundation of China （Grant No 60407001）, National High Technology Developing Program of China （Grant No 2006AA03Z0414）, the Science Fund for Distinguished YoungScholars of Hubei Province （Grant No 2006ABB017） and the Program for New Century Excellent Talents of Ministry of Education, China （Grant No NCET-04-0715）.
文摘An analytic solution derived by multisection model to the small-signal frequency response （SSFR） of wavelength conversion based on cross-gain modulation （XGM） in semiconductor optical amplifiers （SOAs） is presented. The result contains details that can affect the characteristics of SSFR significantly more than previous ones.
基金Supported by the National High Technology Research and Development Programme of China under Grant No 2006AA03Z0414, the National Natural Science Foundation of China under Grant Nos 60877056 and 60707005.
文摘Nonlinear patterning （NLP） effect in wavelength conversion based on transient cross-phase modulation （XPM） in semiconductor optical amplifier （SOA） assisted with a detuning filter is theoretically investigated. A non- adiabatic model is used to estimate the ultrafast dynamics of gain, phase and electron temperature in the SOA. Simulation results show that the NLP can be greatly suppressed by introducing an assist light, especially for the probe wavelength distant from gain peak. Furthermore, the results also indicate that the improvement is more evident for long wavelength probe light and assist light in counter-propagating configuration.
基金Supported by the National High-Tech Research and Development Program of China under Grant No 2006AA03Z414, the National Natural Science Foundation of China under Grant No 60877056, and the Science Fund for Distinguished Young Scholars of Hubei Province under Grant No 2006ABB017.
文摘A scheme of measuring the carrier recovery time in semiconductor optical amplifiers （SOAs） based on dual pump Four-wave mixing technology is presented. The carrier recovery times under 120mA, 180mA 240mA and 300mA injected currents are measured to be 111ps, 81ps, 71ps and 53ps, respectively. The carrier recovery time of the spacing between the two umps is also investigated. The experimental results show that the conversion efficiency keeps constant when the spacing of the two pumps varies within a small range.
