The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented.It is found that the adhesive strength between the Ge_(2)Sb_(2)Te_(5)(GST)layer and the layer below ...The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented.It is found that the adhesive strength between the Ge_(2)Sb_(2)Te_(5)(GST)layer and the layer below could be increased at least 20 times,which is beneficial for solving the phase change material peeling issue in the fabrication process of phase change memory(PCM).Meanwhile,the RESET voltage of the PCM cell with a 3-nm-thick GeN buffer layer can be reduced from 3.5 V to 2.2 V.The GeN buffer layer will play an important role in high density and low power consumption PCM applications.展开更多
Novel Si3.5Sb2Te3 phase change material for phase change memory is prepared by sputtering of Si and Sb2Te3 alloy targets. Crystalline Si3.5Sb2Te3 is a stable composite material consisting of amorphous Si and crystalli...Novel Si3.5Sb2Te3 phase change material for phase change memory is prepared by sputtering of Si and Sb2Te3 alloy targets. Crystalline Si3.5Sb2Te3 is a stable composite material consisting of amorphous Si and crystalline Sb2Te3, without separated Te phase. The thermally stable Si3.5Sb2Te3 material has data retention ability （10 years at 412K） better than that of the Ge2Sb2Te5 material （10 years at 383 K）. Phase change memory device based on Si3.5Sb2Te3 is successfully fabricated, showing low power consumption. Up to 2.2 × 107 cycles of endurance have been achieved with a resistance ratio lager than 300.展开更多
基金Supported by the National Basic Research Program of China(2010CB934300,2011CBA00607,2011CB932800)the National Integrate Circuit Research Program of China(2009ZX02023-003)+1 种基金the National Natural Science Foundation of China(60906004,60906003,61006087,61076121)the Science and Technology Council of Shanghai(1052nm07000).
文摘The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented.It is found that the adhesive strength between the Ge_(2)Sb_(2)Te_(5)(GST)layer and the layer below could be increased at least 20 times,which is beneficial for solving the phase change material peeling issue in the fabrication process of phase change memory(PCM).Meanwhile,the RESET voltage of the PCM cell with a 3-nm-thick GeN buffer layer can be reduced from 3.5 V to 2.2 V.The GeN buffer layer will play an important role in high density and low power consumption PCM applications.
文摘Novel Si3.5Sb2Te3 phase change material for phase change memory is prepared by sputtering of Si and Sb2Te3 alloy targets. Crystalline Si3.5Sb2Te3 is a stable composite material consisting of amorphous Si and crystalline Sb2Te3, without separated Te phase. The thermally stable Si3.5Sb2Te3 material has data retention ability （10 years at 412K） better than that of the Ge2Sb2Te5 material （10 years at 383 K）. Phase change memory device based on Si3.5Sb2Te3 is successfully fabricated, showing low power consumption. Up to 2.2 × 107 cycles of endurance have been achieved with a resistance ratio lager than 300.
