The carrier-density-dependent electron spin relaxation processes in GaAs/AlGaAs multi quantum wells are investigated by a femtosecond pump probe experiment. The spin relaxation time presents two distinguishable trends...The carrier-density-dependent electron spin relaxation processes in GaAs/AlGaAs multi quantum wells are investigated by a femtosecond pump probe experiment. The spin relaxation time presents two distinguishable trends with the increasing excitation density. It increases from 60ps to 70ps with carrier densities from 1 × 10^17 cm^-3 to 5 × 10^17 cm^-3 and gradually saturates up to -80ps at 4 × 10^18 cm^-3. The experimental results are attributed to the combined competition between collision intensification and scattering potential screening and provide a good experimental confirmation for the theoretical D＇yakonov-Perel＇ mechanism descriptions.展开更多
基金Supported by the National Natural Science Foundation of China Grant No. 10274107, 60178020 and 60378006.
文摘The carrier-density-dependent electron spin relaxation processes in GaAs/AlGaAs multi quantum wells are investigated by a femtosecond pump probe experiment. The spin relaxation time presents two distinguishable trends with the increasing excitation density. It increases from 60ps to 70ps with carrier densities from 1 × 10^17 cm^-3 to 5 × 10^17 cm^-3 and gradually saturates up to -80ps at 4 × 10^18 cm^-3. The experimental results are attributed to the combined competition between collision intensification and scattering potential screening and provide a good experimental confirmation for the theoretical D＇yakonov-Perel＇ mechanism descriptions.
