A heterostructure photodetector composed of few-layer NiPS_(3)/WS_(2)is made by using mechanical exfoliation and micro-nano fabrication techniques.The photodetector exhibits a broad-band response wavelengths of rangin...A heterostructure photodetector composed of few-layer NiPS_(3)/WS_(2)is made by using mechanical exfoliation and micro-nano fabrication techniques.The photodetector exhibits a broad-band response wavelengths of ranging of 405 nm and 800 nm.Under the light illumination of 405-nm wavelength and a bias voltage of-2V,the photoresponsivity is 62.6 m A/W and the specific detectivity is 8.59×10^(10)Jones.In addition,the device demonstrates a relatively fast response with rise and fall times of 70 ms and 120 ms.Theoretical calculation suggest that this excellent performance can be ascribed to the type-Ⅱband alignment at the NiPS_3/WS_2 heterostructure interface.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFE0109200)the National Natural Science Foundation of China(Grant Nos.12074013 and 62175210)。
文摘A heterostructure photodetector composed of few-layer NiPS_(3)/WS_(2)is made by using mechanical exfoliation and micro-nano fabrication techniques.The photodetector exhibits a broad-band response wavelengths of ranging of 405 nm and 800 nm.Under the light illumination of 405-nm wavelength and a bias voltage of-2V,the photoresponsivity is 62.6 m A/W and the specific detectivity is 8.59×10^(10)Jones.In addition,the device demonstrates a relatively fast response with rise and fall times of 70 ms and 120 ms.Theoretical calculation suggest that this excellent performance can be ascribed to the type-Ⅱband alignment at the NiPS_3/WS_2 heterostructure interface.
