Vertical transport I-V relations of type-I GaAs/A1As superlattices with doped wells and weak coupling between wells at 77K were investigated with quasistatic and dynamic method.Spontaneous current oscillations are als...Vertical transport I-V relations of type-I GaAs/A1As superlattices with doped wells and weak coupling between wells at 77K were investigated with quasistatic and dynamic method.Spontaneous current oscillations are also investigated.The domain formation time 70±30 ns is directly measured.By using discrete-tunneling model,the key parameters of the relation between tunneling current and the bias between adjacent wells were quantitatively determined from the experimental data.展开更多
基金Supported by the Fujian Natural Science Foundation under Grant No.A97009.
文摘Vertical transport I-V relations of type-I GaAs/A1As superlattices with doped wells and weak coupling between wells at 77K were investigated with quasistatic and dynamic method.Spontaneous current oscillations are also investigated.The domain formation time 70±30 ns is directly measured.By using discrete-tunneling model,the key parameters of the relation between tunneling current and the bias between adjacent wells were quantitatively determined from the experimental data.
