A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between ...A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage~ are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.展开更多
C60 field-effect transistor （OFET） with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-（methyl methacrylate） （PMMA） insulator and a bathophe...C60 field-effect transistor （OFET） with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-（methyl methacrylate） （PMMA） insulator and a bathophenanthroline （Bphen）/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C60 film efficiently.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61071026 and 61177032)the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No.61021061)+1 种基金the Fundamental Research Fund for the Central Universities of Misistry of Education of China (Grant No.ZYGX2010Z004)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090185110020)
文摘A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage~ are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.
基金supported by the National Science Foundation for Post-Doctoral Scientists of China (Grant No.20100471667)the Natural Science Foundation of Chongqing Science and Technology Commission (CQ CSTC) (Grant No.2011jjA40020)+1 种基金the National Natural Science Foundation of China (Grant Nos.60736005 and 61021061)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of China (Grant No.GGRYJJ08-05)
文摘C60 field-effect transistor （OFET） with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-（methyl methacrylate） （PMMA） insulator and a bathophenanthroline （Bphen）/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C60 film efficiently.
