A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by a...A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate.When the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the device.Moreover,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide layer.Physical mechanism for the HJD-TMOS is analyzed.Comparing with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.展开更多
We carried out a proof-of-principle demonstration of the reconstruction of a static vector magnetic field involving adjacent three nitrogen-vacancy(NV) sensors with corresponding different NV symmetry axes in a bulk d...We carried out a proof-of-principle demonstration of the reconstruction of a static vector magnetic field involving adjacent three nitrogen-vacancy(NV) sensors with corresponding different NV symmetry axes in a bulk diamond. By means of optical detection of the magnetic resonance(ODMR) techniques, our experiment employs the continuous wave(CW) to monitor resonance frequencies and it extracts the information of the detected field strength and polar angles with respect to each NV frame of reference. Finally, the detected magnetic field relative to a fixed laboratory reference frame was reconstructed from the information acquired by the multi-NV sensor.展开更多
基金the Natural Science Foundation Project of Chongqing Science and Technology Commission,China(Grant No.cstc2020jcyj-msxmX0243)the Fundamental Research Funds for the Central Universities,China(Grant No.2020CDJ-LHZZ-024)the Chongqing Technology Innovation and Application Development Key Project,China(Grant No.cstc2019jscx-zdztzxX0051).
文摘A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate.When the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the device.Moreover,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide layer.Physical mechanism for the HJD-TMOS is analyzed.Comparing with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11305074,11135002,11804112,and 11275083)the Key Program of the Education Department Outstanding Youth Foundation of Anhui Province,China(Grant No.gxyqZD2017080)+2 种基金the Natural Science Foundation of Anhui Province,China(Grant No.KJHS2015B09)the Open Fund of Anhui Ley Laboratory for Condensed Matter Physics under Extreme Conditions and CAS Key Laboratory of Microscale Magnetic Resonance(Grant No.KLMMR201804)the Fund of Scientific Research Platform of Huangshan University
文摘We carried out a proof-of-principle demonstration of the reconstruction of a static vector magnetic field involving adjacent three nitrogen-vacancy(NV) sensors with corresponding different NV symmetry axes in a bulk diamond. By means of optical detection of the magnetic resonance(ODMR) techniques, our experiment employs the continuous wave(CW) to monitor resonance frequencies and it extracts the information of the detected field strength and polar angles with respect to each NV frame of reference. Finally, the detected magnetic field relative to a fixed laboratory reference frame was reconstructed from the information acquired by the multi-NV sensor.
