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Low-Temperature Solid State Synthesis and Characterization of Superconducting Vanadium Nitride 被引量:1
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作者 Liang-Biao Wang Zheng-Song Lou +2 位作者 Ke-Yan Bao Wei-Qiao Liu Quan-Fa Zhou 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第2期108-111,共4页
Superconducting vanadium nitride (VN) is successfully synthesized by a solid-state reaction of vanadium pentox- ide, sodium amide and sulfur in an autoclave at a relatively low temperature (240-400℃). The obtaine... Superconducting vanadium nitride (VN) is successfully synthesized by a solid-state reaction of vanadium pentox- ide, sodium amide and sulfur in an autoclave at a relatively low temperature (240-400℃). The obtained samples are characterized by x-ray diffraction, x-ray photoelectron spectroscopy and transmission electron microscopy. The result of the magnetization of the obtained VN product as a function of temperature indicates that the onset superconducting transition temperature is about 8.4K. Furthermore, the possible reaction mechanism is also discussed. 展开更多
关键词 Low-Temperature Solid State synthesis and characterization of Superconducting Vanadium Nitride HRTEM XRD SQUID
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Synthesis and Characterization of Ultra-fine Si_3N_4 by Electric Arc Plasma
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作者 邹吉军 G P.Vissokov +3 位作者 何琲 刘昌俊 杜海燕 崔兰 《Plasma Science and Technology》 SCIE EI CAS CSCD 2002年第1期1127-1134,共8页
Under conditions of electric-arc low-temperature plasma (LTP), ultra-finely dis- persed Si3N4 particles have been synthesized by using silicon powder and nitrogen as raw materi- als. The prepared samples are character... Under conditions of electric-arc low-temperature plasma (LTP), ultra-finely dis- persed Si3N4 particles have been synthesized by using silicon powder and nitrogen as raw materi- als. The prepared samples are characterized by X-ray diffraction (XRD), scanning electron spec- troscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The result indicates that the basic phase in Si3N4 produced is α- and β-Si3N4. The particle size of Si3N4 sample is in the range of 30-500 nm. 展开更多
关键词 SI synthesis and characterization of Ultra-fine Si3N4 by Electric Arc Plasma ARC
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