The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attribute...The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attributed to the unipolar barrier,which blocks the majority carriers while allowing unhindered hole transport.To further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure,this pa⁃per systematically investigates the influence of doping on the dark current,photocurrent,and tunneling character⁃istics of InAsSb photodetectors in the PBn structure.Three high-quality InAsSb samples with unintentionally doped absorption layers(AL)were prepared,with varying p-type doping concentrations in the GaSb contact layer(CL)and the AlAsSb barrier layer(BL).As the p-type doping concentration in the CL increased,the device’s turn-on bias voltage also increased,and p-type doping in the BL led to tunneling occurring at lower bias voltages.For the sample with UID BL,which exhibited an extremely low dark current of 5×10^(-6) A/cm^(2).The photocurrent characteristics were well-fitted using the back-to-back diode model,revealing the presence of two opposing space charge regions on either side of the BL.展开更多
本文考虑了由Takagi-Sugeno(T-S)模糊模型描述的一类连续非线性网络控制系统基于观测器的鲁棒L_2–L_∞控制器设计问题.假设网络环境下存在的时变时滞具有特定的随机特性,通过引入一个伯努利随机变量表示时滞在不同区间上分布的概率,建...本文考虑了由Takagi-Sugeno(T-S)模糊模型描述的一类连续非线性网络控制系统基于观测器的鲁棒L_2–L_∞控制器设计问题.假设网络环境下存在的时变时滞具有特定的随机特性,通过引入一个伯努利随机变量表示时滞在不同区间上分布的概率,建立一个新的具有概率分布信息的系统模型.根据平行分布补偿法(parallel distribution compensation,PDC)和Lyapunov稳定性理论,建立基于T-S模糊模型的使系统均方指数稳定且满足L_2–L_∞的性能判据.并利用线性矩阵不等式(linear matrix inequality,LMI)技术同时得到状态观测器增益矩阵和控制器增益矩阵.最后,仿真结果验证了该方法的有效性.展开更多
基金Supported by the Candidate Talents Training Fund of Yunnan Province(202205AC160054)the National Natural Science Foundation of China(62174156)。
文摘The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attributed to the unipolar barrier,which blocks the majority carriers while allowing unhindered hole transport.To further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure,this pa⁃per systematically investigates the influence of doping on the dark current,photocurrent,and tunneling character⁃istics of InAsSb photodetectors in the PBn structure.Three high-quality InAsSb samples with unintentionally doped absorption layers(AL)were prepared,with varying p-type doping concentrations in the GaSb contact layer(CL)and the AlAsSb barrier layer(BL).As the p-type doping concentration in the CL increased,the device’s turn-on bias voltage also increased,and p-type doping in the BL led to tunneling occurring at lower bias voltages.For the sample with UID BL,which exhibited an extremely low dark current of 5×10^(-6) A/cm^(2).The photocurrent characteristics were well-fitted using the back-to-back diode model,revealing the presence of two opposing space charge regions on either side of the BL.
文摘本文考虑了由Takagi-Sugeno(T-S)模糊模型描述的一类连续非线性网络控制系统基于观测器的鲁棒L_2–L_∞控制器设计问题.假设网络环境下存在的时变时滞具有特定的随机特性,通过引入一个伯努利随机变量表示时滞在不同区间上分布的概率,建立一个新的具有概率分布信息的系统模型.根据平行分布补偿法(parallel distribution compensation,PDC)和Lyapunov稳定性理论,建立基于T-S模糊模型的使系统均方指数稳定且满足L_2–L_∞的性能判据.并利用线性矩阵不等式(linear matrix inequality,LMI)技术同时得到状态观测器增益矩阵和控制器增益矩阵.最后,仿真结果验证了该方法的有效性.
