Ion photon emission microscopy （IPEM） is a new ion-induced emission microscopy. It employs a broad ion beam with high energy and low fluence rate impinging on a sample. The position of a single ion is detected by an...Ion photon emission microscopy （IPEM） is a new ion-induced emission microscopy. It employs a broad ion beam with high energy and low fluence rate impinging on a sample. The position of a single ion is detected by an optical system with objective lens, prism, microscope tube and charge coupled device （CCD）. A thin ZnS film doped with Ag ions is used as a luminescent material. Generation efficiency and transmission efficiency of photons in the ZnS（Ag） film created by irradiated Cl ions are calculated. A single Cl ion optical microscopic image is observed by high quantum efficiency CCD. The resolution of a single Cl ion given in this IPEM system is 6μm. Several factors influencing the resolution are discussed. A silicon diode is used to collect the electrical signals caused by the incident ions. Effective and accidental coincidence of optical images and electronic signals are illustrated. A two-dimensional map of single event effect is drawn out according to the data of effective coincidence.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 11690044
文摘Ion photon emission microscopy （IPEM） is a new ion-induced emission microscopy. It employs a broad ion beam with high energy and low fluence rate impinging on a sample. The position of a single ion is detected by an optical system with objective lens, prism, microscope tube and charge coupled device （CCD）. A thin ZnS film doped with Ag ions is used as a luminescent material. Generation efficiency and transmission efficiency of photons in the ZnS（Ag） film created by irradiated Cl ions are calculated. A single Cl ion optical microscopic image is observed by high quantum efficiency CCD. The resolution of a single Cl ion given in this IPEM system is 6μm. Several factors influencing the resolution are discussed. A silicon diode is used to collect the electrical signals caused by the incident ions. Effective and accidental coincidence of optical images and electronic signals are illustrated. A two-dimensional map of single event effect is drawn out according to the data of effective coincidence.
