摘要
紫外光在各领域应用广泛,制备高性能紫外光电探测器(UV PD)受到研究人员的重视。GaN作为宽禁带半导体材料,具有高电子迁移率、稳定的物理化学性质、高击穿电压、低暗电流和固有可见盲区的特点。GaN基UV PD具有制备工艺简单、体积小无需附加滤光系统、易于与其他材料集成等特点,表现出优异的紫外光探测性能。围绕GaN基UV PD,介绍了GaN材料在制备工艺上的研究进展;详细论述了常见结构GaN基UV PD最新结构的优化对器件性能的影响;介绍了基于表面声波、表面等离激元和场效应晶体管集成的新型GaN基UV PD;最后,对GaN基UV PD的发展趋势进行了展望。
Ultraviolet light is widely used in various fields,and the preparation of ultraviolet photodetectors(UV PDs)with high performance has attracted the attention of researchers.As a wide bandgap semiconductor material,GaN has the characteristics of high electron mobility,stable physical chemical properties,high breakdown voltage,low dark current and inherent visible-blind area.GaN-based UV PD has the advantages of simple preparation process,small size,no additional filter system,easy integration with other materials and so on,showing an excellent ultraviolet detection performance.Based on the GaN-based UV PD,firstly,the research progress in the preparation process of GaN materials is introduced.Subsequently,the influences of the latest structural optimization of the common structural GaN-based UV PD on the device performance are discussed in detail,and several new GaN-based UV PDs based on the surface acoustic wave,surface plasmon and field effect transistor integration are introduced.Finally,the development trend of the GaN-based UV PD is prospected.
作者
朱彦旭
李锜轩
谭张杨
李建伟
魏昭
王猜
Zhu Yanxu;Li Qixuan;Tan Zhangyang;Li Jianwei;Wei Zhao;Wang Cai(Key Laboratory of Opto-Electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China)
出处
《半导体技术》
CAS
北大核心
2021年第5期337-348,共12页
Semiconductor Technology
基金
国家重点研发计划资助项目(2017YFB0402803)。
作者简介
朱彦旭(1977-),男,河北秦皇岛人,博士,副教授,主要从事GaN HEMT器件、发光二极管、激光器、太阳电池等半导体器件的研究,E-mail:zhuyx@bjut.edu.cn;李锜轩(1994一),男,河南开封人,硕士研究生,主要从事GaN HEMT器件及探测器的研究。
