摘要
本文利用Ｘ射线双晶衍射Ｂｏｎｄ方法，精确测量了各种条件下生长的半绝缘ＧａＡｓ的晶格参数．建立了过量Ａｓ在晶体中存在的间隙原子对模型，在理论上找到了影响半绝缘ＧａＡｓ晶格参数的根本原因．并建立了半绝缘ＧａＡｓ晶格参数与化学配比的关系，实现了化学配比的无损测量．这对于ＧａＡｓ单晶的制备和相关光电子器件的研究具有重要意义．
Abstract The lattice parameters of SI GaAs grown by various techniques are accurately measured by double crystal X ray diffraction Bond method. A model of interstitial couple for describing excess arsenic in GaAs is established. The cause of affecting the lattice parameters of SI GaAs is established. The cause of affecting the lattice parameters of SI GaAs is analyzed, and the relationship between the lattice parameter and the stoichometry of SI GaAs is found. Non destructive measurements of stoichometry in SI GaAs are realized, which is very important for growing high quality GaAs crystal and processing relative devices.
