摘要
采用射频磁控溅射法在Si（100）衬底上沉积过渡族金属Mn掺杂的ZnO薄膜。将5％及7％原子比的MnO，与ZnO粉末充分混合后，加压制成靶材，通过改变溅射过程中的气氛和衬底温度沉积了Zn1-xMnxO薄膜。x射线衍射和场发射扫描电镜的分析表明：掺入≤7％的Mn原子不会改变薄膜的晶体结构，薄膜呈高度（002）晶面择优取向；薄膜表面均匀致密，颗粒尺寸约为30hm；Mn的掺入使薄膜的电学性能明显改善，但氧分压的使用或者Mn含量过大又会使薄膜的电阻率增加。
Mn-doped ZnO thin films are successfully prepared on Si （100） substrate by high-vacuum RF magnetron sputtering technique. MnO2 （atom ratio of 5% and 7%） and ZnO high-purity powders were thoroughly mixed and pressed into pellets as targets. Zn1-xMnxO thin films were deposited by changing the gas and substrate temperature during the sputtering. XRD, SEM analysis and four probe method were employed to characterize the Mn-doped ZnO films. The results showed that the crystalline structure of the films was kept unchanged when doping with no higher than 7%Mn and the films had a c-axis preferred orientation. The films had a homogeneous and dense surface with the crystalline dimension of about 30nm. The electrical property of the films was highly improved, but the resistivity of the films increased when using the oxygen partial pressure and the excessive Mn doping.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第A06期2343-2345,共3页
Journal of Functional Materials
基金
基金项目：国家高技术研究发展计划（863计划）资助项目（2006AA032219）
作者简介
楼晓波（1983-），女，江苏太仓人。在读研究生。主要从事半导体功能材料的研究。
通讯作者：沈鸿烈
