摘要
功率器件作为能源转换系统的核心部件被广泛应用于各类电子设备中,碳化硅功率器件凭借其更低的导通电阻、更高的工作温度和工作电压等优异特性,在高压大功率领域得到越来越多的应用。本文简述了碳化硅材料的特性优势,碳化硅功率器件的主要类型和结构,以及碳化硅器件的主要应用领域,最后总结了碳化硅金属氧化物半导体场效应晶体管等功率器件的主要发展趋势。
Power devices are widely used in various electronic devices as the core components of energy conversion systems.Silicon carbide power devices have been increasingly applied in high-voltage and high-power fields due to their excellent characteristics such as lower on-resistance,higher operating temperature,and higher operating voltage.This article briefly describes the characteristics and advantages of silicon carbide materials,the main types and structures of silicon carbide power devices,and the main application areas of silicon carbide power devices.Finally,the main development trends of silicon carbide MOSFET are summarized.
作者
韦仕贡
淮永进
WEI Shigong;HUAI Yongjin(BeiJing YanDong Microelectronic Co.,Ltd,Beijing 100176,China)
出处
《微纳电子与智能制造》
2023年第1期44-48,共5页
Micro/nano Electronics and Intelligent Manufacturing
基金
北京市科协“卓越工程师”成长计划项目资助
作者简介
韦仕贡,硕士,主要研究方向为半导体功率器件。E-mail:wshgong@ydme.com;通信作者:淮永进,博士,主要研究方向为半导体双极保护电路、功率器件和化合物半导体。E-mail:hyj@ydme.com
